Semiconductor device and method for manufacturing the same

ABSTRACT

A semiconductor device includes a first insulator film having a first opening, a first wiring layer extending from the first opening onto the first insulator film, a first semiconductor chip mounted on the first insulator film so as to be electrically coupled with the first wiring layer, and a resin portion applied on the first insulation film to cover the first semiconductor chip.

RELATED APPLICATION

This Application claims priority to Japanese Patent Application2007-034742 entitled “Semiconductor Device and Method for Manufacturingthe Same” filed Feb. 15, 2007 which is incorporated herein in itsentirety.

TECHNICAL FIELD

The invention relates to a semiconductor device and a method formanufacturing the same, and more particularly, to a semiconductor devicehaving a semiconductor chip mounted on an insulator film, and a methodfor manufacturing the same.

BACKGROUND OF THE INVENTION

Recently the semiconductor device having the semiconductor chip mountedthereon has shown the tendency to have a thin structure. Patentdocuments such as Japanese Patent No. 3598060 and Japanese UnexaminedPatent Application Publication No. 2005-101580 disclose a module with abuilt-in semiconductor device having a wiring on at least one surface ofan insulator substrate as a related art example 1. Referring to FIG. 1as a sectional view of the semiconductor device according to the relatedart example 1, a first semiconductor chip 16 is mounted onto a firstwiring layer 14 using a die adhesive material 15. The firstsemiconductor chip 16 is electrically coupled with the first wiringlayer 14 via a bonding wire 18. The first semiconductor chip 16 and thebonding wire 18 are sealed with a resin portion 35. The resin portion 35is embedded in a resin portion 32 so as to be integrated therewith. Theresin portion 32 is provided with the first wiring layer 14 and a secondwiring layer 24 at opposite surfaces, respectively. A through electrode34 pierces the resin portion 32 to connect the first and the secondwiring layers 14 and 24.

In the related art example 1, as the resin portion 35 for sealing thefirst semiconductor chip 16 is embedded in the resin portion 32, it isdifficult to reduce the thickness of the resin portion 32. As the firstand the second wiring layers 14 and 24 are exposed, a short-circuit islikely to occur between those wiring layers. The insulator films may beapplied to the surfaces of both the first and the second wiring layers14 and 24 for suppressing the aforementioned short-circuit. However,this results in an increase in the thickness of the semiconductordevice.

SUMMARY OF THE INVENTION

The present invention has been made in view of the above circumstancesand provides a semiconductor device capable of reducing the thicknessand a method for manufacturing the semiconductor device.

According to an aspect of the present invention, there is provided asemiconductor device which includes a first insulator film having afirst opening, a first wiring layer extending from the first openingonto the first insulator film, a semiconductor chip mounted on the firstinsulator film and electrically coupled with the first wiring layer, anda resin portion applied onto the first insulator film to cover thesemiconductor chip. The present invention allows the thickness of thefirst wiring layer in the first opening to be reduced, allowing thesemiconductor device to have the thin structure.

According to another aspect of the present invention, there is provideda semiconductor device formed by stacking the aforementionedsemiconductor devices.

According to yet another aspect of the present invention, there isprovided a method for manufacturing a semiconductor device that includesthe steps of: forming a first wiring layer on a first insulator filmhaving a first opening, the first wiring layer extending from the firstopening; mounting a first semiconductor chip electrically coupled withthe first wiring layer on the first insulator film; and forming a resinportion on the first insulator film to cover the first semiconductorchip. The invention allows the thickness of the first wiring layer inthe first opening to be reduced, allowing the semiconductor device tohave a thin structure.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a sectional view of a semiconductor device as a related artexample 1;

FIG. 2A, FIG. 2B and FIG. 2C show a method (first case) formanufacturing the semiconductor device according to a first embodiment;

FIG. 3A, FIG. 3B and FIG. 3C show a method (second case) formanufacturing the semiconductor device according to a first embodiment;

FIG. 4 is a view showing a method (third case) for manufacturing thesemiconductor device according to the first embodiment;

FIG. 5A, FIG. 5B and FIG. 5C show a method (fourth case) formanufacturing the semiconductor device according to the firstembodiment;

FIG. 6 is a sectional view of a semiconductor device according to asecond embodiment;

FIG. 7 is a sectional view of a semiconductor device according to athird embodiment;

FIG. 8 is a sectional view of a semiconductor device according to afourth embodiment;

FIG. 9 is a sectional view of a semiconductor device according to afifth embodiment;

FIG. 10 is a sectional view of a semiconductor device according to asixth embodiment; and

FIG. 11 is a sectional view of a semiconductor device according to aseventh embodiment.

DETAILED DESCRIPTION First Embodiment

A first embodiment is an example of a semiconductor device usable as awiring substrate. A method for manufacturing the semiconductor deviceaccording to the first embodiment will be described referring to FIGS.2A to 5C. Referring to FIG. 2A, a resist formed of an epoxy resin isapplied onto a dummy substrate 41 formed of a metal, an insulator, orthe like to form a first insulator film 10. A first opening 12 is formedin the first insulator film 10 through a lithography technology. Thefirst insulator film 10 with the first opening 12 is formed as describedabove. Referring to FIG. 2B, a second insulator film 20 having a secondopening 22 is also formed on a dummy substrate 42.

Referring to FIG. 2C, a plurality of the first openings 12 are formed inthe first insulator film 10. The second insulator film 20 also has aplurality of the second openings 22. The first and the second insulatorfilms 10 and 20 may be formed of a material other than epoxy resin, forexample, polyimide resin, silicon resin and the like. Preferably, eachof the first and the second insulator films 10 and 20 exhibitssufficient heat resistance against the temperature at which the resinportion 32 is formed as described later referring to FIG. 4.

Referring to FIG. 3A, a first wiring layer 14 formed of a conductivematerial such as copper (Cu) extending from the first opening 12 ontothe first insulator film 10 is formed through plating. A firstsemiconductor chip 16 formed of a silicon material is mounted on a dieattachment portion 14 a of the first wiring layer 14 using a dieadhesive material 15. In other words, the first semiconductor chip 16 ismounted on the first insulator film 10. The first semiconductor chip 16and the first wiring layer 14 are electrically coupled via a conductivebonding wire 18.

Referring to FIG. 3B, a second wiring layer 24 formed of a conductivematerial such as Cu extending from the second opening 22 onto the secondinsulator film 20 is formed using the method as shown in FIG. 3A.Referring to FIG. 3C, the first wiring layer 14 is formed on the firstinsulator film 10. The first wiring layer 14 includes the die attachmentportion 14 a on which the first semiconductor chip 16 is mounted, a padportion 14 c provided to cover the first opening 12, and a wiringportion 14 b for connecting the pad portions 14 c, or the pad portion 14c and the die attachment portion 14 a.

Referring to FIG. 4, a dummy substrate 42 applied with the secondinsulator film 20 is disposed on the bottom surface of a lower mold 43having a recess portion 45. A resin 30 derived from melting the epoxythermoset resin is applied onto the second insulator film 20 and thesecond wiring layer 24. The first insulator film 10 on which the firstsemiconductor chip 16 is mounted and a dummy substrate 41 are disposedon an upper mold 44. The lower mold 43 and the upper mold 44 are joinedsuch that the first semiconductor chip 16 is immersed in the resin 30 inthe molten state. The pressure and the heat at about 175° C. are appliedto the resin 30 in the molten state to be formed into a resin portion32.

Referring to FIG. 5A, the first and the second wiring layers 14 and 24,and the first and the second insulator films 10 and 20 are formed onopposite surfaces of the resin portion 32 after removing the upper andthe lower molds 44 and 43. That is, the resin portion 32 is formed on(below in FIG. 5A) the first insulator film 10 to cover the firstsemiconductor chip 16. Referring to FIG. 5B, the dummy substrates 41 and42 are removed. Referring to FIG. 5C, a through hole that pierces theresin portion 32 from the first opening 12 to the second opening 22 isformed through the laser beam. A through electrode 34 formed of theconductive material such as Cu is formed in the through hole such thatthe first and the second wiring layers 14 and 24 are electricallycoupled. In this way, a semiconductor device 100 according to the firstembodiment is manufactured.

In the case where the first insulator film is applied to the lowersurface of the first wiring layer 14 for the purpose of preventing ashort-circuit therein in the related art example 1 as shown in FIG. 1,an electrode other than the first wiring layer 14 is formed in theopening of the first insulator film. Meanwhile, referring to FIG. 3A,the semiconductor device according to the first embodiment is providedwith the first wiring layer 14 which extends from the first opening 12in the first insulator film 10 onto the first insulator film 10. In thefirst embodiment, the short-circuit in the first wiring layer 14 can beprevented while reducing the thickness of the first wiring layer 14 inthe first opening 12. This makes it possible to provide thesemiconductor device with the thin structure.

Referring to FIG. 2A, the resist is applied onto the dummy substrate 41to form the first insulator film 10 such that the thickness of the firstinsulator film 10 is reduced. As the first wiring layer 14 in the firstopening 12 and the first wiring layer 14 on the first insulation film 10can be formed simultaneously, the resultant thickness t4 of the firstwiring layer 14 in the first opening 12 becomes substantially the sameas the thickness t5 of the first wiring layer 14 on the first insulatorfilm 10 as shown in FIG. 5C.

Referring to FIG. 5C, the second insulator film 20 with the secondopening 22 is formed on (below in FIG. 5C) the resin portion 32.Referring to FIG. 3B, the second wiring layer 24 extends between thesecond insulator film 20 and the resin portion 32, from the secondopening 22. As the first and the second wiring layers 14 and 24 areformed on opposite surfaces of the resin portion 32, the semiconductordevice 100 according to the first embodiment may be used as the wiringsubstrate which contains the semiconductor chip, with the oppositesurfaces formed as the wiring layers. As the second wiring layer 24extends from the second opening 22 between the second insulator film 20and the resin portion 32, the resultant device may be formed to have athin structure.

As shown in FIG. 4, when the resin portion 32 is formed, the secondinsulator film 20 is applied onto the bottom of the lower mold 43 suchthat the second wiring layer 24 is placed on the second insulator film20. The resin 30 in the molten state is applied to the second insulatorfilm 20. The first insulator film 10 is disposed on the resin 30 in themolten state such that the first wiring layer 14 is disposed at thelower position and pressed to form the resin portion 32. Theaforementioned method serves to directly seal the first semiconductorchip 16 with the resin portion 32. In the related art example 1 shown inFIG. 1, the semiconductor chip 16 is sealed with the resin portion 35.The thickness t1 defined by the resin portion 35 and the upper surfaceof the first semiconductor chip 16 is required to be in the range from200 □m to 300 □m. The thickness t2 of the resin portion 32 on the resinportion 35 is required to be about 50 □m. Meanwhile, in the firstembodiment, as the resin portion 35 is not formed as shown in FIG. 5C,the thickness t3 of the resin portion 32 on (below in FIG. 5C) the firstsemiconductor chip 16 may be set to about 100 □m. This makes it possibleto form the semiconductor device 100 to have the thin structure.

Referring to FIG. 4, the second insulator film 20 applied to the dummysubstrate 42 is disposed onto the bottom of the lower mold 43. The firstinsulator film 10 applied to another dummy substrate 41 is disposed ontothe resin 30 in the molten state. It is preferable to form the resinportion 32 in the state where the first and the second insulator films10 and 20 are reinforced. This makes it possible to reduce eachthickness of the first and the second insulator films 10 and 20,resulting in the semiconductor device with the thin structure. Referringto FIG. 4, the first insulator film 10 may be disposed onto the bottomof the lower mold 43, and the second insulator film 20 may be disposedon the rein 30 in the molten state.

The bonding wire 18 is provided for connecting the first semiconductorchip 16 and the first wiring layer 14. In the case where the firstsemiconductor chip 16 and the first wiring layer 14 are connected viathe bonding wire 18, in the semiconductor device as the related artexample 1 shown in FIG. 1, the thickness t1 of the resin portion 35 isrequired to be increased such that the bonding wire 18 is not exposedfrom the resin portion 35. Meanwhile, the first embodiment allows theresin portion 32 to be formed between the bonding wire 18 and the firstwiring layer 14. Accordingly, the thickness t3 shown in FIG. 5C may bereduced to about 100 □m. In the case where the first semiconductor chip16 and the first wiring layer 14 are connected via the bonding wire 18,it is effective to form the resin portion 32 as shown in FIG. 5C.

Referring to FIG. 5C, the through electrode 34 is formed for connectingthe first and the second wiring layers 14 and 24. The first and thesecond wiring layers 14 and 24 are thus electrically connected by thethrough electrode 34.

Second Embodiment

FIG. 6 is a sectional view of a semiconductor device according to asecond embodiment. In the semiconductor device according to the secondembodiment, a second semiconductor chip 26 is mounted below (above inFIG. 6) the second insulator film 20 via a die adhesive material 25. Thesecond semiconductor chip 26 is electrically coupled with the secondwiring layer 24 via a bonding wire 28. The resin portion 32 covers thesecond semiconductor chip 26. Other structure is the same as that of thefirst embodiment, and explanation thereof, thus, will be omitted.

In the second embodiment, the semiconductor chips may be mounted on boththe first and the second insulator films 10 and 20. A plurality ofsemiconductor chips may be mounted on at least one of the first and thesecond insulator films 10 and 20. The use of the plurality ofsemiconductor chips to be mounted allows improvement of the mountefficiency of the semiconductor chips.

Third Embodiment

In a third embodiment, the second insulator film is not applied.Referring to FIG. 7, the semiconductor device according to the thirdembodiment is not provided with the second insulator film 20 and thesecond wiring layer 24. Other structure is the same as that of the firstembodiment, and the explanation thereof, thus, will be omitted. In thethird embodiment, the insulator film and the wiring layer may be appliedto at least one surface of the resin portion 32. The insulator film andthe wiring layer are applied only to one surface of the resin portion 32to realize the thin structure of the semiconductor device. However, themount efficiency of the semiconductor chip may be deteriorated.

Fourth Embodiment

In a fourth embodiment, a lead frame is used as the second wiring layer.Referring to FIG. 8, the second insulator film 20 is not used, and alead frame 24 d is used instead of the second wiring layer 24. Otherstructure is the same as that of the second embodiment, and theexplanation thereof, thus, will be omitted. In the fourth embodiment,the insulator film may be applied only to one surface of the resinportion 32, and the wiring layers may be applied to opposite surfaces ofthe resin portion 32.

Fifth Embodiment

In a fifth embodiment, the first semiconductor chip is flip-chipmounted. Referring to FIG. 9, the bonding wire 18 is not connected tothe first semiconductor chip 16. A stud bump 19, for example, is formedon (below in FIG. 9) the surface of the first semiconductor chip 16. Thestud bump 19 is electrically coupled with the second wiring layer 24.Other structure is the same as that of the first embodiment, and theexplanation thereof, thus, will be omitted. In the fifth embodiment, thefirst semiconductor chip 16 and the first wiring layer 14 may beconnected via the stud bump 19, the second wiring layer 24 and thethrough electrode 34. In the fifth embodiment, as the bonding wire 18 isnot required, the structure of the semiconductor device may be formed tohave the thinner structure compared with the first embodiment.

Sixth Embodiment

A sixth embodiment is an example of a stacked semiconductor deviceformed by stacking the semiconductor devices according to the firstembodiment. Referring to FIG. 10, semiconductor devices 100 a and 100 baccording to the first embodiment are stacked. The second wiring layer24 on the lower surface of the semiconductor device 100 a is providedwith solder balls 50. In the sixth embodiment, the semiconductor devices100 according to the first embodiment may be stacked. The semiconductordevices to be stacked may be selected from those according to the secondto the fifth embodiments besides the first embodiment.

Seventh Embodiment

A seventh embodiment is an example where another semiconductor chip ismounted on the semiconductor device 100 according to the firstembodiment. Referring to FIG. 11, a semiconductor chip 56 is mounted onthe semiconductor device 100 according to the first embodiment via a dieadhesive material 55. The semiconductor chip 56 is electrically coupledwith the first wiring layer 14 of the semiconductor device 100 via abonding wire 58. The semiconductor chip 56 and the bonding wire 58 aresealed with a resin portion 52.

In the seventh embodiment, the semiconductor device according to any oneof the first to the fifth embodiments may be used as the wiringsubstrate such that the semiconductor chip 56 is mounted thereon. In theseventh embodiment, the semiconductor chip 56 is face-up mounted.However, it may be facedown mounted, for example, the flip-chipmounting.

As have been described with respect to the preferred embodiments of theinvention, it is to be understood that the invention is not limited tothe aforementioned embodiments, but may be changed or modified withoutdeparting from the scope of the appended claims.

Finally, various aspects of the present invention are summarized below.

According to an aspect of the present invention, there is provided asemiconductor device which includes a first insulator film having afirst opening, a first wiring layer extending from the first openingonto the first insulator film, a semiconductor chip mounted on the firstinsulator film and electrically coupled with the first wiring layer, anda resin portion applied onto the first insulator film to cover thesemiconductor chip. The present invention allows the thickness of thefirst wiring layer in the first opening to be reduced, allowing thesemiconductor device to have the thin structure.

The aforementioned structure may be provided with a bonding wire forconnecting the first semiconductor chip and the first wiring layer. Theresultant semiconductor device is allowed to have the thin structure inspite of connecting the first semiconductor chip and the first wiringlayer that are difficult to be thin via the bonding wire.

The structure may be provided with a second insulator film having asecond opening applied onto the resin portion, and a second wiring layerthat extends between the second insulator film and the resin portion,from the second opening. The resultant structure allows formation of thewiring layers at opposite surfaces, resulting in the semiconductordevice with the thin structure.

The structure is provided with a second semiconductor chip disposedbelow the second insulator film so as to be electrically coupled withthe second wiring layer. The resin portion may be structured to coverthe second semiconductor chip. As two or more semiconductor chips areprovided, the mount efficiency of the semiconductor chips may beimproved.

The structure may be provided with a through electrode for connectingthe first and the second wiring layers. The structure allows the throughelectrode to electrically couple the first and the second wiring layers.

In the structure, a thickness of the first wiring layer in the firstopening may be equal to a thickness of the first wiring layer on thefirst insulator film.

According to another aspect of the present invention, there is provideda semiconductor device formed by stacking the aforementionedsemiconductor devices.

According to yet another aspect of the present invention, there isprovided a method for manufacturing a semiconductor device that includesthe steps of: forming a first wiring layer on a first insulator filmhaving a first opening, the first wiring layer extending from the firstopening; mounting a first semiconductor chip electrically coupled withthe first wiring layer on the first insulator film; and forming a resinportion on the first insulator film to cover the first semiconductorchip. The invention allows the thickness of the first wiring layer inthe first opening to be reduced, allowing the semiconductor device tohave a thin structure.

In the structure, a resist may be applied on a dummy substrate to formthe first insulator film. The structure reduces the thickness of thefirst insulator film, allowing the semiconductor device to have a thinstructure.

In the structure, a second wiring layer may be formed on a secondinsulator film having a second opening, the second wiring layerextending from the second opening, and the second insulator film may beprovided on the resin portion such that the second wiring layer isinterposed between the second insulator film and the resin portion. Thestructure allows manufacturing of the semiconductor device having thewiring layers on opposite surfaces of the resin portion.

In the structure, the step of forming the resin portion may include thesteps of: providing one of the first and the second insulator films on abottom of a mold such that corresponding one of the first and the secondwiring layers is disposed on an upper side; applying a resin in a moltenstate onto one of the first and the second insulator films; and formingthe resin portion by applying pressure to the other of the first and thesecond insulator films on the resin in the molten state such thatcorresponding one of the first and the second wiring layers is disposedon a lower side. The structure allows the first semiconductor chip to bedirectly sealed with the resin portion, allowing the semiconductordevice to have a thin structure.

In the structure, the step of providing one of the first and the secondinsulator films on the bottom of the mold may be performed by providingon the bottom of the mold one of the first and the second insulatorfilms applied to the dummy substrate. The step of forming the resinportion may include the step of providing on the resin in the moltenstate the other of the first and the second insulator films applied toanother dummy substrate. The structure allows the first and the secondinsulator films to be reinforced with the dummy substrate. This makes itpossible to reduce each thickness of the first and the second insulatorfilms, allowing the semiconductor device to have a thin structure.

The present invention is not limited to the specifically disclosedembodiments and variations, and other embodiments and variations may bemade without departing from the scope of the present invention.

1. A semiconductor device comprising: a first insulator film having afirst opening; a first wiring layer extending from the first openingonto the first insulator film; a semiconductor chip mounted on the firstinsulator film and electrically coupled with the first wiring layer; anda resin portion applied onto the first insulator film to cover thesemiconductor chip.
 2. The semiconductor device according to claim 1,further comprising a bonding wire for connecting the first semiconductorchip and the first wiring layer.
 3. The semiconductor device accordingto claim 1, further comprising: a second insulator film having a secondopening applied onto the resin portion; and a second wiring layerextending between the second insulator film and the resin portion, fromthe second opening.
 4. The semiconductor device according to claim 3,further comprising a second semiconductor chip disposed below the secondinsulator film so as to be electrically coupled with the second wiringlayer, wherein the resin portion covers the second semiconductor chip.5. The semiconductor device according to claim 3, further comprising athrough electrode for connecting the first and the second wiring layers.6. The semiconductor device according to claim 1, wherein a thickness ofthe first wiring layer in the first opening is equal to a thickness ofthe first wiring layer on the first insulator film.
 7. The semiconductordevice according to claim 4, wherein said first semiconductor chip andsaid second semiconductor chip are stacked.
 8. The semiconductor deviceaccording to claim 4, wherein said first semiconductor chip and saidsecond semiconductor chip are mounted to have facing top surfaces. 9.The semiconductor device according to claim 1, further comprising asecond semiconductor chip that is mounted on a leadframe.
 10. Thesemiconductor device according to claim 1 wherein said firstsemiconductor chip is flip-chip mounted.
 11. A method for manufacturinga semiconductor device comprising the steps of: forming a first wiringlayer on a first insulator film having a first opening, the first wiringlayer extending from the first opening; mounting on the first insulatorfilm a first semiconductor chip electrically coupled with the firstwiring layer; and forming a resin portion on the first insulator film tocover the first semiconductor chip.
 12. The method for manufacturing asemiconductor device according to claim 11, further comprising the stepof applying a resist on a dummy substrate to form the first insulatorfilm.
 13. The method for manufacturing a semiconductor device accordingto claim 11, further comprising the steps of: forming a second wiringlayer on a second insulator film having a second opening, the secondwiring layer extending from the second opening; and providing the secondinsulator film on the resin portion such that the second wiring layer isinterposed between the second insulator film and the resin portion. 14.The method for manufacturing a semiconductor device according to claim11, wherein the step of forming the resin portion includes the steps of:providing one of the first and the second insulator films on a bottom ofa mold such that corresponding one of the first and the second wiringlayers is disposed on an upper side; applying a resin in a molten stateonto one of the first and the second insulator films; and forming theresin portion by applying pressure to the other of the first and thesecond insulator films on the resin in the molten state such thatcorresponding one of the first and the second wiring layers is disposedon a lower side.
 15. The method for manufacturing a semiconductor deviceaccording to claim 14, wherein: the step of providing one of the firstand the second insulator films on the bottom of the mold is performed byproviding on the bottom of the mold one of the first and the secondinsulator films applied to the dummy substrate; and the step of formingthe resin portion includes the step of providing on the resin in themolten state the other of the first and the second insulator filmsapplied to another dummy substrate.
 16. The method for manufacturing asemiconductor device according to claim 11 further comprising providinga through electrode for connecting said first and said second wiringlayers.
 17. The method for manufacturing a semiconductor deviceaccording to claim 11 further comprising mounting a second semiconductorchip on a side of said first insulator layer opposite the side on whichsaid first semiconductor chip is mounted.
 18. The method formanufacturing a semiconductor device according to claim 11 furthercomprising mounting said first semiconductor chip and said secondsemiconductor chip to have facing top surfaces.
 19. The method formanufacturing a semiconductor device according to claim 11 furthercomprising mounting a second semiconductor chip on a leadframe.
 20. Themethod for manufacturing a semiconductor device according to claim 11further comprising flip-chip mounting said first semiconductor chip.